geometry process details principal device types cmlt2222a cmlt2207 cmlm2205 cmkt2207 gross die per 4 inch wafer 41,699 process CP191V small signal transistor npn - amp/switch transistor chip process epitaxial planar die size 16.5 x 16.5 mils die thickness 7.1 mils base bonding pad area 3.5 x 4.3 mils emitter bonding pad area 3.5 x 4.3 mils top side metalization al - 30,000? back side metalization au-as - 13,000? www.centralsemi.com r1 (22-march 2010)
process CP191V typical electrical characteristics www.centralsemi.com r1 (22-march 2010)
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